| PART |
Description |
Maker |
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AMMC-5620 AMMC-5620-W10 AMMC-5620-W50 |
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier
AMMC-5620 · 6-20 GHz High Gain Amplifier
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SST12LP19E-NR |
2.4 GHz High-Gain, High-Efficiency Power Amplifier
|
Microchip Technology
|
| LD4606A |
30 GHz, 380 W CW, HIGH EFFICIENCY, HIGH POWER GAIN
30 GHz 380 W CW HIGH EFFICIENCY HIGH POWER GAIN
|
NEC[NEC]
|
| RFMA1720-0.5W-Q7 |
17.7 - 19.7 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA5872-1W-Q7 |
5.8 - 7.2 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| LD7215W |
6 GHz / 3 kW CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz, 3 kW CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC[NEC]
|
| CGD1042H CGD1042H-2015 |
1 GHz, 23 dB gain high output power doubler
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| LD7262 |
6 GHz / 750 W CW / CONDUCTION COOLING / HIGH POWER GAIN
6 GHz, 750 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp.
NEC[NEC]
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
